Changes of the absorption cross section of Si nanocrystals with temperature and distance

• Michael Greben,
• Petro Khoroshyy,
• Sebastian Gutsch,
• Daniel Hiller,
• Margit Zacharias and
• Jan Valenta

Beilstein J. Nanotechnol. 2017, 8, 2315–2323, doi:10.3762/bjnano.8.231

• Si NCs cannot be considered as independent on experimental conditions and sample parameters. Keywords: absorption cross section; average lifetime; nanocrystal distance; photoluminescence decay; silicon nanocrystals; Introduction For decades, silicon – an abundant, nontoxic material with high

• controlled. The emission properties such as quantum yield (QY) of such Si NC/SiO2 multilayer (ML) structures were studied as a function of inter-nanocrystal distance, temperature, excitation and emission wavelength [5][6]. However, there is still little knowledge about one of the most crucial optical

• determination by two completely independent methods including a photoluminescence (PL) modulation technique [10]. In this work, we employ this procedure to analyze the dependence of the ACS of ML structures on mainly two important parameters: inter-nanocrystal distance and temperature. It will be shown that